InP100 Product Platform

Integrated design and manufacturing services for a broad range of photonic devices including FP & DFB Lasers, SOAs, RSOAs and Detectors. This common design and manufacturing framework for InP photonics devices, uses established and reliable process modules to produce a broad range of device types on 100mm wafers. We have introduced the InP100 platform approach at exactly the point when optical communications and sensing applications require a single-chip, nanoscale solution to meet volume, power, performance and cost demands.

InP100 Product Platform Key Features

  • 100 mm wafer size – up to 125,000 die sites per wafer
  • High yield, proven reliability
  • Scalable to high volume
  • Optimised architecture for SiPh flip-chip bonding
  • On-wafer facet etch and optical coating
  • Non-hermetic compatibility
  • Optimised architecture for SiPh flip-chip bonding
  • Reduced time to market

InP100 Platform Process Module Technology

InP RSOA chip optimised for SiPh Flip-Chip Assembly

Key design features:

  1. Vertical alignment surfaces +/- 5 nm height accuracy to optical mode centre (z-axis)
  2. Etched facet with self-aligned front-side fiducials to both ridge (x-axis) and facet (y-axis)
  3. Metal pads optimised for flip chip bonding. Optional AuSn solder
  4. Backside alignment fiducials, and chip IDs
  5. Particle-free front-side
InP RSOA 8x-array for SiPh Flip-Chip Assembly

Key design features:

  • Vertical alignment surfaces  +/- 5nm height accuracy to optical mode centre. (z-axis)
  • Etched facet with self-aligned front-side fiducials to both ridge (x-axis) and facet (y-axis).
  • Metal pads for flip chip bonding. AuSn solder optional
  • Backside alignment fiducials, and chip IDs
  • Single chips or multi-element arrays

Example Devices 

Wide operating temperature 1310nm DFB
  • Application: 5G LTE
  • Designed for CW operation at 25mW ex-facet output power
  • Functional from -50C to +95C assembled in TOSA packages
  • Performance achieved through optimised MQW active region, grating design, and cavity length

 

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High Power 1310/1550nm DFB for LIDAR
  • 100mW at 1310nm at 25°C / 60 mW at 1550nm at 25°C
  • Higher powers achievable through  further optimised epi/grating designs for longer cavity lasers
  • LWs <100kHz
  • SMSR > 50dB
  • Complementary O-band and C-band booster SOAs

 

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DFB laser diode arrays designed for use in CW-WDM MSA compliant applications

  • > 50mW per channel CW operation
  • 400GHz channel spacing around 1300nm
  • Operating temp 20°C – 70°C
  • AlInGaAs MQW active region
  • Suitable for non-hermetic applications

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Contact Sivers Photonics

For more information about Sivers Photonics, or to discuss your photonics project requirements.

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