1310nm DFB Laser Diode

Laser diode operating at a wide temperature range and is designed for applications including 5G LTE

The 1310 DFB laser diode operates at a wide temperature range and is designed for applications including 5G LTE.

The laser design is a ridge waveguide (RWG) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) ebeam lithography grating layer.

The devices are compatible with non-hermetic assembly, with facets coated with an anti-reflection (AR) coating at the front and high-reflection (HR) coating at the back.

This product is available as a singulated die in Gel-Pak or on tape.

Key features

Designed for CW operation at 25mW ex-facet output power
Functional from -50°C to +95°C – tested in TOSA packages
Optimised MQW active region, grating design, and cavity length

Applications

5G LTE

Fig. 1. LIV Curves — Fig. 1. Optical Spectrum

Fig. 2. Wavelength and SMSR with Temperature

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