Since the project’s launch in 2019, significant progress has been made in the successful hybrid integration of DFB lasers onto silicon photonics integrated circuits. Reference interface designs and assembly processes have been created for ﬂip-chip bonding DFB lasers from Sivers’ InP 100 product platform, with sub 0.5-μm precision, enabling reproducible coupling losses below 2dB and waveguide-coupled power as high as 40mW.
This integration of DFB lasers into silicon photonic integrated circuits allows for the creation of compact, low-power, and cost-effective devices that can operate at high speeds over long distances and can target a a broad range of applications, including optical communications, optical 3D sensing (LiDAR), biophotonics, high-precision metrology, gas sensing and more.
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Hybrid laser integration tailored to your application
The combined technology enables you to add multiple infrared light sources to your PIC design, with reference designs available in the O and C-band. Upon request, additional wavelengths can be considered, addressing the fields of optical communications, sensors, computing, or LiDAR applications.
Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers. Published in: Micromachines
David Coenen, Huseyin Sar, Herman Oprins, Aleksandrs Marinins, Yannick De Koninck, Stuart Smyth, Yoojin Ban, Joris Van Campenhout and Ingrid De Wolf
Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding With sub-300 nm Alignment Precision. Published in: IEEE Journal of Selected Topics in Quantum Electronics (subscription required)
Authors: Aleksandrs Marinins , Sebastian Hänsch, Huseyin Sar, François Chancerel , Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara , David Coenen, Peter Verheyen, Giovanni Capuz , Yannick De Koninck, Ozan Yilmaz, Geert Morthier , Filip Schleicher , Geraldine Jamieson, Stuart Smyth, Andrew McKee, Yoojin Ban, Marianna Pantouvaki, Douglas Charles La Tulipe, and Joris Van Campenhout