1310nm DFB Laser Diode 

Laser diode operating at a wide temperature range and is designed for applications including 5G LTE

 

 

 

The 1310 DFB laser diode operates at a wide temperature range and is designed for applications including 5G LTE.

The laser design is a ridge waveguide (RWG) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) ebeam lithography grating layer.

The facets are coated with a hermetic anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

This product is available to be purchased as a singulated die in Gel Pak or tape.

Key features

  • Designed for CW operation at 25mW ex-facet output power
  • Functional from -50°C to +95°C – tested in TOSA packages
  • Optimised MQW active region, grating design, and cavity length

Applications

  • 5G LTE
Fig. 1. LIV Curves
Fig. 1. Optical Spectrum

 

Fig. 2. Wavelength and SMSR with Temperature
Fig. 2. Wavelength and SMSR with Temperature

 

 

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